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trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile 3000-v esd protection

protection switch for 1-2 li-ion/lip batteries SI7902EDN vishay siliconix preliminary information document number: 71801 s-05696?rev. a, 18-feb-02 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet, common drain v ds (v) r ds(on) ( ) i d (a) 0.028 @ v gs = 4.5 v 8.3 30 0.030 @ v gs = 3.7 v 8.0 0.043 @ v gs = 2.5 v 6.7 d g 1 s 1 d g 2 s 2 n-channel n-channel 1.8 k 1.8 k 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d d d d 3.30 mm 3.30 mm powerpak 1212-8 bottom view

parameter symbol 10 secs steady state unit drain-source voltage v ds 30 gate-source voltage v gs 12 v t a = 25 c 8.3 5.6 continuous drain current (t j = 150 c) a t a = 85 c i d 6.0 4.0 pulsed drain current i dm 40 a continuous source current (diode conduction) a i s 2.7 1.3 t a = 25 c 3.2 1.5 maximum power dissipation a t a = 85 c p d 1.7 0.79 w operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit t 10 sec 30 38 maximum junction-to-ambient a steady state r thja 65 82 c/w maximum junction-to-case (drain) steady state r thjc 1.9 2.4 c/w notes a. surface mounted on 1? x 1? fr4 board. this data sheet contains preliminary specifications that are subject to change.
SI7902EDN vishay siliconix preliminary information www.vishay.com 2 document number: 71801 s-05696 ? rev. a, 18-feb-02

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.60 v v ds = 0 v, v gs = 4.5 v 1 a gate-body leakage i gss v ds = 0 v, v gs = 12 v 10 ma v ds = 24 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v, t j = 85 c 20 a on-state drain current a i d(on) v ds 5 v, v gs = 4.5 v 30 a v gs = 4.5 v, i d = 8.3 a 0.023 0.028 drain-source on-state resistance a r ds(on) v gs = 3.7 v, i d = 8.0 a 0.025 0.030 v gs = 2.5 v, i d = 3.0 a 0.035 0.043 forward transconductance a g fs v ds = 15 v, i d = 8.3 a 26 s diode forward voltage a v sd i s = 2.7 a, v gs = 0 v 0.75 1.2 v dynamic b total gate charge q g 10 15 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 8.3 a 2.3 nc gate-drain charge q gd 2.4 turn-on delay time t d(on) 0.9 1.5 rise time t r v dd = 15 v, r l = 15 1.5 2.5 turn-off delay time t d(off) v dd = 15 v, r l = 15 i d 1 a, v gen = 4.5 v, r g = 6 2.5 4.0 s fall time t f 2.5 4.0 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.

0.001 10 1000 gate current vs. gate-source voltage 0.0 0.2 0.4 0.6 0.8 0 3 6 9 12 15 gate-current vs. gate-source voltage v gs ? gate-to-source voltage (v) 0.01 0.1 1 100 v gs ? gate-to-source voltage (v) ? gate current ( i gss a) 15 0 36912 t j = 25 c t j = 150 c ? gate current (ma) i gss
SI7902EDN vishay siliconix preliminary information document number: 71801 s-05696 ? rev. a, 18-feb-02 www.vishay.com 3

0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.00 0.02 0.04 0.06 0.08 0 6 12 18 24 30 0 6 12 18 24 30 012345 0 1 2 3 4 5 0246810 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 v gs = 5 thru 2 v 25 c t c = 125 c v ds = 15 v i d = 8.3 a v gs = 4.5 v i d = 8.3 a v gs = 4.5 v v gs = 2.5 v ? 55 c 1.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 2.5 v 2 v v gs = 3.7 v
SI7902EDN vishay siliconix preliminary information www.vishay.com 4 document number: 71801 s-05696 ? rev. a, 18-feb-02

? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.02 0.04 0.06 0.08 012345 1 10 30 i d = 8.3 a 0 0.2 0.6 0.8 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j ? temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s 0.01 0 1 40 50 10 600 single pulse power, juncion-t o-ambient time (sec) 30 20 power (w) 0.1 10 100 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm i d = 3 a 0.4
SI7902EDN vishay siliconix preliminary information document number: 71801 s-05696 ? rev. a, 18-feb-02 www.vishay.com 5

10 ? 3 10 ? 2 1 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance

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